Breaking Through the "Heat Wall" of Next-Generation Memory: University of Tokyo and Others Demonstrate New Design Pushing Antiferromagnets Toward Picosecond Operation

In chiral antiferromagnets, promising as next-generation memory materials, thinning the film thickness to 30 nanometers or less and optimizing heat dissipation has enabled ultrafast spin-reversal control that does not rely on heat. This opens a path to overcoming the speed limitations imposed by conventional thermal relaxation.