
Hafnia Keeps Its Antiferroelectric Order Down to 0.6nm in Lanthanum-Doped Thin Films
Single-crystal films of 10% La-doped hafnia kept intrinsic antiferroelectric order under compressive strain down to 0.6nm. Here is what the 850±50°C figure means, and which performance metrics for energy storage, cooling and memory have yet to be measured.








