
TSMC and UT Austin Demonstrate 2-Nanosecond Magnetic Memory, but Edge AI Accuracy Remains a Hurdle
The University of Texas at Austin and TSMC have fabricated SOT-MRAM on a 300mm wafer that operates at 2ns and 350fJ. Simulations based on real measured data reveal concrete challenges for practical edge AI deployment, including overcoming device-to-device variation.








