
World's First SiC Superjunction MOSFET Debuts With 1,635V Rating and Near-Zero Thermal Drift
China's AlkaidSemi has unveiled the world's first SiC superjunction MOSFET rated at 1,635V. The device achieves zero on-resistance temperature drift in its practical operating range and a 166% boost in high-temperature current density, targeting power-density breakthroughs in AI data center power delivery and EVs.








