
Fudan University Demonstrates Non-Volatile Memory Generating 0.5V from a Single Electron, Overcoming Weak Room-Temperature Signals
Fudan University has demonstrated a two-dimensional memory device that reads the presence of a single electron at room temperature as a 0.5V non-volatile threshold shift. While this reaches the physical limit on charge count, connecting it to high-capacity chips will require verifying retention and endurance across arrays.








