MBCFET

Multi-Bridge Channel FET (MBCFET) is Samsung's trade name for its nanosheet-based Gate-All-Around (GAA) transistor architecture. Introduced at the 3nm process node, MBCFET replaces the traditional FinFET structure by using stacked horizontal nanosheets. This design allows for greater design flexibility, improved power efficiency, and higher performance by providing better control over the current flow and reducing leakage.